Accession Number : ADA195679

Title :   Metal Contacts on Semiconductors.

Descriptive Note : Periodic rept. no. 7, 1 Apr-30 Sep 87,

Corporate Author : UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Personal Author(s) : Williams, R H

PDF Url : ADA195679

Report Date : 30 Sep 1987

Pagination or Media Count : 5

Abstract : The experiments on metal-semiconductor interfaces have been extended in the last six months using a range of techniques including Raman spectroscopy, photoemission spectroscopy, and transport measurements. The results obtained give complementary information and improve the understanding of Schottky barrier formation. The deposition of Sb on clean cleaved InP (110) surfaces has been investigated most intensively. This Sb/InP exhibits highly unusual properties amongst metal-semiconductor interfaces. Indium phosphides, Antimony. (mjm)

Descriptors :   *METAL CONTACTS, *SEMICONDUCTORS, ANTIMONY, DEPOSITION, INDIUM PHOSPHIDES, INTERFACES, MEASUREMENT, METALS, PHOTOELECTRIC EMISSION, RAMAN SPECTROSCOPY, SCHOTTKY BARRIER DEVICES, SPECTROSCOPY, TRANSPORT, ANTIMONY, DEPOSITION, INDIUM PHOSPHIDES, INTERFACES, MEASUREMENT, METAL CONTACTS, METALS, PHOTOELECTRIC EMISSION, RAMAN SPECTROSCOPY, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, SPECTROSCOPY, TRANSPORT

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE