Accession Number : ADA195680

Title :   Metal Contacts on Semiconductors.

Descriptive Note : Periodic rept. no. 8, 1 Oct 87-1 Apr 88,

Corporate Author : UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Personal Author(s) : Williams, R H

PDF Url : ADA195680

Report Date : 01 Apr 1988

Pagination or Media Count : 6

Abstract : Since the last report a number of experiments have been carried out on metal-semiconductor interfaces and semiconductor heterostructures. The range of experimental techniques applied included low energy electron diffraction (LEED), X-ray photoemission spectroscopy (XPS), Raman scattering, and transport measurement, i.e. current-voltage (I-V) and capacitance-voltage (C-V) measurements. The system investigated most thoroughly within this project is Sb on InP(110). As mentioned in an earlier report this Sb/InP interface exhibits properties which makes it an ideal system to study the formation of Schottky barriers and also test the different theoretical models for this formation. The Raman and transport measurements were performed on both Sb/n-InP and Sb/p-InP. This work has been accepted for publication and preprints are included. Indium phosphides, Antimony. (MJM)

Descriptors :   *METAL CONTACTS, *SEMICONDUCTORS, ANTIMONY, ELECTRON DIFFRACTION, EXPERIMENTAL DESIGN, INDIUM PHOSPHIDES, INTERFACES, LIGHT SCATTERING, LOW ENERGY, MEASUREMENT, METALS, METHODOLOGY, MODELS, RAMAN SPECTRA, SCHOTTKY BARRIER DEVICES, STRUCTURES, THEORY, TRANSPORT, X RAY PHOTOELECTRON SPECTROSCOPY, ANTIMONY, ELECTRON DIFFRACTION, EXPERIMENTAL DESIGN, INDIUM PHOSPHIDES, INTERFACES, LIGHT SCATTERING, LOW ENERGY, MEASUREMENT, METAL CONTACTS, METALS, METHODOLOGY, MODELS, RAMAN SPECTRA, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, STRUCTURES, THEORY, TRANSPORT, X RAY PHOTOELECTRON SPECTROSCOPY

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE