Accession Number : ADA195731

Title :   Joint Services Electronics Program.

Descriptive Note : Annual progress rept. 1 May-31 Dec 87,

Corporate Author : CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s) : Oldham, W G

PDF Url : ADA195731

Report Date : 29 Feb 1988

Pagination or Media Count : 99

Abstract : As part of a project to construct, model and compare very high performances Si and GaAs devices, deep-submicron Si MOSFETs have been investigated. Using a novel optical lithography process, these extremely high-gain MOSFETs with varying oxide thicknesses and channel lengths have been fabricated. Figure 1 shows a Scanning Electron Microscope(SEM)picture of a transistor cross-section with an effective channel length 0.2 micron, an oxide thickness of 86 A, and junction depth of 0.2 micron. Devices with effective channel lengths as small as 0.15 micron and oxide thickness as thin as 36 A have been successfully fabricated and operated. (rh)

Descriptors :   *SEMICONDUCTORS, *ELECTRONICS, GALLIUM, CHANNELS, HIGH GAIN, JUNCTIONS, LENGTH, LITHOGRAPHY, MOSFET SEMICONDUCTORS, OPTICAL PROPERTIES, OXIDES, THICKNESS, TRANSISTORS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE