Accession Number : ADA195777

Title :   Simulation of the Response of a Gallium Arsenide JFET to Single Particle Radiation in Two and Three Dimensions.

Descriptive Note : Technical rept. 1 Aug-Sep 87,

Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT

Personal Author(s) : Kerskovsky, J P ; Grubin, H L ; Morrison, B J

PDF Url : ADA195777

Report Date : 30 Sep 1987

Pagination or Media Count : 63

Abstract : The response of a GaAs JFET to single particle radiation is simulated in two and three dimensions through numerical solution of the drift and diffusion, and Poisson's equations. Scaling of the particle track density is introduced in the two-dimensional simulation. The two- and three-dimensional results are compared. Qualitative agreement between the three-dimensional simulation are observed, but quantitative differences in current pulses and charge collected at the devices contacts are present. In an effort to aid in the design and fabrication of devices more resistant to single event upsets and to gain understanding of the internal dynamics of devices struck by single radiation particles, device researchers have turned to numerical simulation. Early studies of such phenomena involved two-dimensional simulations of the response of two-terminal N+P diode structures to single particle radiation. These studies gave light to a result coined the field-funneling effect. Keywords: Junction field effect transistors; Heterojunctions; Gallium arsenides. (jhd)

Descriptors :   *FIELD EFFECT TRANSISTORS, *JUNCTION TRANSISTORS, AGREEMENTS, CHARGED PARTICLES, DENSITY, DIODES, DRIFT, DYNAMICS, EQUATIONS, FABRICATION, GALLIUM ARSENIDES, INTERNAL, MATHEMATICAL MODELS, NUMERICAL ANALYSIS, PARTICLES, POISSON EQUATION, PULSES, RADIATION, RESPONSE, SIMULATION, SOLUTIONS(GENERAL), STRUCTURES, THREE DIMENSIONAL, TWO DIMENSIONAL

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE