Accession Number : ADA195936

Title :   Processing-Enhanced SEU Tolerance in High Density SRAMs.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA SPACE SCIENCES LAB

Personal Author(s) : Fu, J S ; Weaver, H T ; Browning, J S ; Lee, K H ; Koga, R

PDF Url : ADA195936

Report Date : 01 Jul 1988

Pagination or Media Count : 24

Abstract : We report theoretical calculations and experimental verification of an increase in memory cell SEU tolerance when Sandia's 2-micron-technology 16K SRAMs are fabricated with a radiation-hardened 1-micron CMOS process. An advanced two-dimensional transient transport-plus-circuit simulator has been employed to calculate the differential contributions from each of the vertical dimensional changes in the transition from the 2-micron process to the 1-micron process. Error cross-section data, performed at the Berkeley cyclotron on the first such device lot, indicate that total improvement in threshold LET is a factor of 2 or better. A saturation phenomenon associated with the high-LET events is described, and physical mechanisms responsible for the saturation are discussed. (RH)

Descriptors :   *CELLS, *MEMORY DEVICES, COMPUTATIONS, CROSS SECTIONS, ERRORS, HIGH DENSITY, PHYSICAL PROPERTIES, REPORTS, SIZES(DIMENSIONS), THEORY, VERTICAL ORIENTATION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE