Accession Number : ADA201833

Title :   Fundamental Studies and Device Development in Beta Silicon Carbide.

Descriptive Note : Semi-annual progress rept. 1 Feb-31 Aug 88,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Davis, Robert F.

Report Date : 31 AUG 1988

Pagination or Media Count : 32

Abstract : The primary thrust of research of this period has been to deposit and characterize the contact materials of TaSi2 and Al on n- and p-type material, respectively. Auger electron spectroscopy detected some oxygen throughout the thickness of these films. Current voltage characteristics were non-linear and highly resistive due to oxygen contamination in the films. A new ultra-high vacuum deposition chamber is being constructed to deposit pure contacts. Rectifying contacts of Gold, Platinum, and PtSix were also studied. Pt surpassed Au in its rectifying properties. Ion implantation into alpha and beta silicon carbide at room temperature and 550C were also conducted. A new capacitance voltage system was purchased and commissioned. (JES)

Descriptors :   *SILICON CARBIDES, AUGER ELECTRON SPECTROSCOPY, CAPACITANCE, CONTAMINATION, ION IMPLANTATION, MATERIALS, OXYGEN, P TYPE SEMICONDUCTORS, PLATINUM, THICKNESS, VOLTAGE.

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE