Accession Number : ADA202723
Title : The Use of Tris(trimethylsilyl)arsine to Prepare AlAs, GaAs and InAs. The X-Ray Crystal Structure of (Me3Si)3AsAlCl3.C7H8.
Descriptive Note : Technical rept.,
Corporate Author : DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
Personal Author(s) : Wells, Richard L. ; Pitt, Colin G. ; McPhail, Andrew T. ; Purdy, Andrew P. ; Shafieezad, Soheila
Report Date : 12 DEC 1988
Pagination or Media Count : 9
Abstract : The reactions of (Me3Si)3As with group III halides have been utilized to prepare A1As, GaAs and InAs. The adduct (Me3Si)3AsA1C13 has been isolated as an intermediate in the formation of A1As from (Me3Si)3As and A1C13. The crystal structure of its toluene solvate has been determined. Keywords: Aluminum arsenide, Gallium arsenide, Indium arsenide, Preparation, Crystal structure, Silyl radicals. (MJM)
Descriptors : *ALUMINUM ARSENIDES, *ARSENIDES, *GALLIUM ARSENIDES, *INDIUM COMPOUNDS, *ARSINES, *SILANES, *METHYL RADICALS, CRYSTAL STRUCTURE, SOLVATES, TOLUENES, X RAYS.
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE