Accession Number : ADA204868
Title : Process Challenges in Compound Semiconductors.
Descriptive Note : Final rept. 11 Feb 86-15 Aug 88.
Corporate Author : NATIONAL MATERIALS ADVISORY BOARD (NAS-NAE) WASHINGTON DC
PDF Url : ADA204868
Report Date : Aug 1988
Pagination or Media Count : 154
Abstract : Compound semiconductors, such as GaAs, InP, and HgCdTe, are essential components in future photonics and microelectronics technologies. If the United States is to be competitive in these technologies, attention must be directed to the reproducible and affordable processing of these materials. This report assesses the current status of compound semiconductor processing technology and identifies factors that limit the ability to fabricate advanced electronic and optoelectronic devices. Emphasis is placed on current and near-term devices, but the process technologies discussed are generic to future components and systems based on these materials. Keywords: Compound semiconductors, Galium arsenide, Mercury cadmium telluride, Indium phosphide, Semiconductor processing, Device fabrication, Process technologies, Process modelling, Substrates, Transistor structures, Interconnections, Crystal growth, Epitaxial structures, Epitaxial growth, Etching, Lithography, Ion implantation, Dielectrics, Process diagnostics, Process environment.
Descriptors : *CADMIUM TELLURIDES, *ELECTRONIC EQUIPMENT, *INDIUM PHOSPHIDES, *MERCURY COMPOUNDS, *MICROELECTRONICS, *PROCESSING, *SEMICONDUCTORS, *GALLIUM ARSENIDES, CRYSTAL GROWTH, DIELECTRICS, ELECTROOPTICS, EPITAXIAL GROWTH, ETCHING, ION IMPLANTATION, LITHOGRAPHY, STRUCTURES, SUBSTRATES, TRANSISTORS, UNITED STATES
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE