Accession Number : ADA204881

Title :   Proton Backscattering in Bulk Silicon at Large Angles of Incidence.

Descriptive Note : Final rept.,

Corporate Author : AIR FORCE WEAPONS LAB KIRTLAND AFB NM

Personal Author(s) : Tallon, R W ; Hoffland, A H ; Kemp, W T ; Locker, T R

PDF Url : ADA204881

Report Date : Dec 1988

Pagination or Media Count : 26

Abstract : This report describes proton backscatter studies performed at the Tandem Van de Graaff Accelerator Facility. The objective was to determine if backscattering protons were sufficient to alter the radiation induced proton damage in silicon electronics when high energy protons (6 MeV and below) bombarded bulk silicon at large angles of incidence (65 deg). The overall results showed that when the angles of incidence of bombarding protons (on bulk silicon) approached 80 deg, and their energies were lowered to about 100 KeV the number of backscattering protons approached 12 percent of the bombarding number. At this point (and at lower energies), the effect of the backscattering protons would become significant and they would have to be taken into account when determining the radiation induced proton damage in silicon electronics. The number of backscattering protons, their energies, and their angles of reflections (for silicon and other solids) can accurately be determined from a computer program called TRIM (Transport of Ions in Matter). Keywords: Proton backscattering, Channeling, Bulk silicon, Radiation effects, Test methods. (JHD)

Descriptors :   *BACKSCATTERING, *PROTON SCATTERING, *RADIATION DAMAGE, *SILICON, ANGLE OF INCIDENCE, HIGH ANGLES, BULK MATERIALS, COMPUTER PROGRAMS, ELECTRONIC EQUIPMENT, HIGH ENERGY, IONS, LOW ENERGY, REFLECTION, SOLIDS, TEST METHODS, TRANSPORT

Subject Categories : Solid State Physics
      Nuclear Physics & Elementary Particle Physics
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE