Accession Number : ADA207666

Title :   VLSI Integrated Circuit Contact Reliability by Interface Spectroscopy.

Descriptive Note : Final rept. Nov 85-Jun 88,

Corporate Author : COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Yang, E S ; Evans, H

PDF Url : ADA207666

Report Date : Jan 1989

Pagination or Media Count : 99

Abstract : Metal semiconductor contacts comprise one of the most important interfaces in modern microelectronics. However, the underlying physical mechanisms which lead to their gross electrical characteristics are not well understood. The thrust of our work under AFOSR contract No. F-30602-85-C-0072 has been to explore the microscopic origins of the energy barrier present at the metal semiconductor interface. We feel that only with such an understanding can the degradation and reliability of ohmic and rectifying contracts be understood and hence better controlled. The work we will report can be divided into three separate, but yet very inter-related, topics. First, we developed and utilized forward bias capacitance techniques for determining the interface state distribution in silicon Schottky diodes. These techniques were applied to as deposited and annealed palladium silicon diodes as well as epitaxial and non-epitaxial nickel silicide structures. (rh)

Descriptors :   *ANNEALING, *INTEGRATED CIRCUITS, *SEMICONDUCTORS, BARRIERS, BIAS, CAPACITANCE, DEGRADATION, DEPOSITION, DIODES, DISTRIBUTION, ELECTRICAL PROPERTIES, ENERGY, FORWARD AREAS, INTERFACES, METAL CONTACTS, METALS, MICROELECTRONICS, PALLADIUM, PHYSICAL PROPERTIES, RELIABILITY, SCHOTTKY BARRIER DEVICES, SILICON, SPECTROSCOPY

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE