Accession Number : ADA207674

Title :   Reactive Ion Etching of Polymer Films.

Descriptive Note : Technical rept.,

Corporate Author : CORNELL UNIV ITHACA SCHOOL OF CHEMICAL ENGINEERING

Personal Author(s) : Dems, B C ; Rodriguez, F ; Solbrig, C M ; Namaste, Y M ; Obendorf, S K

PDF Url : ADA207674

Report Date : 12 May 1989

Pagination or Media Count : 25

Abstract : The need for nanometer sized features in integrated circuits calls for the use of dry etching techniques using glow discharge plasmas. The reactive ion etching, RIE, mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight walled etched structures. The design of processes and materials for RIE requires a knowledge of the effects of operating variables on various parameters. In the present work, the parameter emphasized is the etch rate. A novel aspect of the apparatus used incorporates a laser interferometer for in situ measurements of etch rate. Keywords: Reactive ion etching; Plasma; Resist microlithography. (MJM)

Descriptors :   *ETCHING, *PHOTOLITHOGRAPHY, *POLYMERIC FILMS, DRY MATERIALS, GLOW DISCHARGES, INTEGRATED CIRCUITS, ION BEAMS, LASERS, METHODOLOGY, MICROSCOPY, OPTICAL INTERFEROMETERS, PLASMAS(PHYSICS), RATES, REACTIVITIES, SOLIDS, STRUCTURES, SURFACES, VAPOR PHASES, YIELD

Subject Categories : Inorganic Chemistry
      Organic Chemistry
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE