Accession Number : ADA207834

Title :   Negative-Working Electron Beam Resist Based on Poly(methyl methacrylate).

Descriptive Note : Technical rept.,

Corporate Author : CORNELL UNIV ITHACA SCHOOL OF CHEMICAL ENGINEERING

Personal Author(s) : Namastet, Y. M. ; Obendorf, S. K. ; Dems, B. C. ; Rodriguez, F.

Report Date : 12 MAY 1989

Pagination or Media Count : 9

Abstract : Blends of polymethylmethacrylate (PMMA) and dipentaerythritol pentaacrylate (DPEPA) respond to electron beam exposure as negative resists, with sensitivity that increases with increasing DPEPA concentration. Blends of 80 wt. % PMMA and 20 wt. % DPEPA exhibit an electron sensitivity of 4 microcoulombs/sq cm and a contrast gamma of 1.2. Resolution of 0.25 micrometers has been demonstrated with this blend without the use of non-solvent rinses or plasma de-scumming. This superior resolution for a negative electron resist is attributed to the small degree of swelling of the PMMA host polymer. Increasing the molecular weight of the PMMA component to 450,000 increases the sensitivity to 1 microcoulomb/sq cm improves the contrast to a gamma value of 2.3 without affecting resolution or sensitivity relative to the blends with low molecular weight PMMA. keywords: Microlithography, Resist, Crosslinking, Electron beam resist. (aw)

Descriptors :   *ELECTRON BEAMS, *POLYMERIC FILMS, ELECTRONS, EXPOSURE(GENERAL), LIGHTWEIGHT, MICROSCOPY, MOLECULAR WEIGHT, PHOTOLITHOGRAPHY, POLYMETHYL METHACRYLATE, RESOLUTION.

Subject Categories : SOLID STATE PHYSICS
      ELECTRICITY AND MAGNETISM

Distribution Statement : APPROVED FOR PUBLIC RELEASE

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