Accession Number : ADA222783

Title :   Surface Science. Volume 228, Numbers 1-3, April (1) 1990. Proceedings of the International Conference (4th) on Modulated Semiconductor Structures Held in Ann Arbor, Michigan, on 17-21 July 1989.

Descriptive Note : Final rept. 1 Jan-31 Dec 89,

Corporate Author : MICHIGAN UNIV ANN ARBOR

Personal Author(s) : Chang, L. L. ; Merlin, R. ; Tsui, D. C.

Report Date : 01 APR 1990

Pagination or Media Count : 600

Abstract : This volume contains papers presented at the Fourth International Conference on Modulated Semiconductor Structures which was held at The University of Michigan in Ann Arbor, USA, July 17-21, 1989. The conference was attended by over 200 participants from 20 countries. The theme of focus was quantum heterostructures with a coverage of both materials and physics, in common with the earlier conferences held in Montpellier, France in 1987, Kyoto, Japan, in 1985, and in Pasadena, USA in 1982. Contents include: Epitaxial metal(NiAl)-semiconductor(III-V) heterostructures, Fabrication and electrical properties of ultrathin CoSi2/Si heterostructures, Magneto-transport in ultrathin ErAs epitaxial layers buried in GaAs, Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures. (jes)

Descriptors :   *ELECTRICAL PROPERTIES, *SEMICONDUCTORS, EPITAXIAL GROWTH, FRANCE, GALLIUM ARSENIDES, INTERNATIONAL, JAPAN, LAYERS, MICHIGAN, MODULATION, PHYSICS, QUANTUM THEORY, STRUCTURES, SURFACES, SYMPOSIA.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE