Accession Number : ADA222783
Title : Surface Science. Volume 228, Numbers 1-3, April (1) 1990. Proceedings of the International Conference (4th) on Modulated Semiconductor Structures Held in Ann Arbor, Michigan, on 17-21 July 1989.
Descriptive Note : Final rept. 1 Jan-31 Dec 89,
Corporate Author : MICHIGAN UNIV ANN ARBOR
Personal Author(s) : Chang, L. L. ; Merlin, R. ; Tsui, D. C.
Report Date : 01 APR 1990
Pagination or Media Count : 600
Abstract : This volume contains papers presented at the Fourth International Conference on Modulated Semiconductor Structures which was held at The University of Michigan in Ann Arbor, USA, July 17-21, 1989. The conference was attended by over 200 participants from 20 countries. The theme of focus was quantum heterostructures with a coverage of both materials and physics, in common with the earlier conferences held in Montpellier, France in 1987, Kyoto, Japan, in 1985, and in Pasadena, USA in 1982. Contents include: Epitaxial metal(NiAl)-semiconductor(III-V) heterostructures, Fabrication and electrical properties of ultrathin CoSi2/Si heterostructures, Magneto-transport in ultrathin ErAs epitaxial layers buried in GaAs, Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures. (jes)
Descriptors : *ELECTRICAL PROPERTIES, *SEMICONDUCTORS, EPITAXIAL GROWTH, FRANCE, GALLIUM ARSENIDES, INTERNATIONAL, JAPAN, LAYERS, MICHIGAN, MODULATION, PHYSICS, QUANTUM THEORY, STRUCTURES, SURFACES, SYMPOSIA.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE