Accession Number : ADA241926

Title :   Total Dielectric Isolation (TDI) of Fully Depleted Device Structures.

Descriptive Note : Final rept. 1 Feb 90-31 Jan 91,

Corporate Author : SURREY UNIV GUILDFORD (UNITED KINGDOM) DEPT OF ELECTRONIC AND ELECTRICAL ENGI NEERING

Personal Author(s) : Hemment, Peter L.

Report Date : AUG 1991

Pagination or Media Count : 65

Abstract : The aim of this programme is to prepare, evaluate and optimise Total Dielectric Isolated (TDI) structures in order to develop the technology for the preparation of substrates for circuits which exhibit improved radiation tolerance. The work carried out during the life of this project has provided a sound base for this novel technology. Successful experiments include the preparation of device worthy substrates in variously patterned wafers, identification of the microstructure of TDI wafers by cross-sectional transmission electron microscopy (XTEM) and the successful implementation of a new predictive software package (IRIS). This SIMOX process model has been used to optimise the masking layer thicknesses and processing parameters to achieve planar TDI structures. (Author)

Descriptors :   CROSS SECTIONS, DEPLETION, DIELECTRICS, ELECTRON MICROSCOPY, IDENTIFICATION, ISOLATION, LAYERS, MASKING, MICROSTRUCTURE, PARAMETERS, PREPARATION, PROCESSING, RADIATION TOLERANCE, SOUND, STRUCTURES, SUBSTRATES, THICKNESS, TRANSMITTANCE.

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE