Accession Number : ADA243819

Title :   Lithographic Micropatterning of Polythiophene Thin-Films.

Descriptive Note : Master's thesis,

Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s) : Kutsche, Carl A.

Report Date : DEC 1991

Pagination or Media Count : 92

Abstract : Several semiconductor processing procedures that could be used to micropattern polythiophene thin-films were investigated. Using standard semiconductor lithographic processing procedures as a guide to what environments the polythiophene would be exposed to, a series of tests duplicating specific processing steps were devised. These tests determined that polythiophene could withstand heating on a hot plate to 150 C for 5 minutes, heating in a convection oven to 200 C for 30 minutes, and to 100 C for 1 hour without changing thin film thickness, index of refraction, surface morphology, or absorbance. Of the solvents polythiophene was exposed to, only isopropyl alcohol caused no film deformation. A reactive ion etching process using a low temperature silicate passivating and masking layer over the polythiophene is recommended for processing polythiophene. Using this procedure highly anisotropic structures were achieved using a 5 minute reactive ion etch with a chamber pressure of 50 mtorr, plasma power of 100 watts, and an oxygen flow rate of 50 standard cubic centimeters per minute.

Descriptors :   ALCOHOLS, ANISOTROPY, CONVECTION, DEFORMATION, ETCHING, FILMS, FLOW RATE, ION BEAMS, ISOMERS, LAYERS, LOW TEMPERATURE, MASKING, MORPHOLOGY, OVENS, OXYGEN, POLYMERS, PROCESSING, PROPANOLS, REACTIVITIES, REFRACTIVE INDEX, REPRODUCTION(COPYING), SEMICONDUCTORS, SILICATES, SOLVENTS, STRUCTURES, SURFACE PROPERTIES, THICKNESS, THIN FILMS, THIOPHENES.

Subject Categories : Printing and Graphic Arts
      Solid State Physics
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE