Accession Number : ADA269147
Title : Nitridation of GaAs(100) by Laser-Induced Decomposition of HN3.
Descriptive Note : Technical rept.,
Corporate Author : EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY
Personal Author(s) : Bu, Y. ; Lin, M. C.
Report Date : 1993
Pagination or Media Count : 10
Abstract : GaAs can be readily nitridated at low temperatures by photolysis of adsorbed HN3 at 308 nm. The annealing of the exposed and photolyzed samples at 450 K, GaN, AsN and bridged AsNGa species were detected by HREELS and XPS. Further annealing at 780 K caused the desorption of most AsN species while GaN and AsNGa nitrides remained on the surface. (Author)
Descriptors : *GALLIUM ARSENIDES, *NITRIDES, *LASERS, *DECOMPOSITION, *PHOTOLYSIS, *ADSORPTION, *DESORPTION, *NITROGEN, *HYDRAZOIC ACID, *SILICON, LOW TEMPERATURE, ANNEALING, SURFACES, SINGLE CRYSTALS, CHEMICAL BONDS, HIGH RESOLUTION, ELECTRON ENERGY, LOSSES, X RAY PHOTOELECTRON SPECTROSCOPY.
Subject Categories : Physical Chemistry
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE