Accession Number : ADA269287
Title : In-situ Growth Monitoring of Molecular Beam Epitaxy Processes.
Descriptive Note : Annual technical rept. 1 Jul 92-30 Jun 93,
Corporate Author : ARIZONA STATE UNIV TEMPE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Maracas, George N. ; Sohie, Guy R.
Report Date : 03 SEP 1993
Pagination or Media Count : 26
Abstract : The strong collaboration between Arizona State University and General Electric Corp. has resulted in a comprehensive program to develop intelligent, in-situ sensors for monitoring and control of semiconductor thin film growth by Molecular Beam Epitaxy (MBE). An intimate collaboration with a commercial MBE manufacturer (DCA Instruments) has resulted in a new ultra-stable substrate manipulator which is compatible with in-situ optical measurements. Another long time collaboration with an ellipsometer manufacturer (Woollam Co.) has generated a new prototype high speed in-situ spectroscopic ellipsometer. Both the manipulator and the ellipsometer have become commercial products. Adaptation of spectroscopic ellipsometry to real time MBE growth monitoring and development of advanced computer algorithms have enabled the tracking of epitaxial layer thickness, temperature and alloy composition. Temperature dependent (from room temperature to 650 deg C) optical constants of GaAs have been measured and verified. Work is continuing on obtaining optical constants for AlGaAs compound semiconductors.... In-situ growth monitoring, MBE
Descriptors : *MANIPULATORS, *MOLECULAR BEAMS, *MONITORING, *SEMICONDUCTORS, *THIN FILMS, *EPITAXIAL GROWTH, ADAPTATION, ALGORITHMS, ALLOYS, ALUMINUM GALLIUM ARSENIDES, COMPUTERS, CONSTANTS, CONTROL, ELLIPSOMETERS, GALLIUM ARSENIDES, LAYERS, MEASUREMENT, PROTOTYPES, ROOM TEMPERATURE, SUBSTRATES, THICKNESS, TIN, TRACKING, VELOCITY, DETECTORS, OPTICAL PROPERTIES, SPECTROSCOPY, ELLIPSES, POLARIZATION, LIGHT.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE