Accession Number : ADA270513

Title :   Common Themes and Mechanisms of Epitaxial Growth, Symposium held in San Francisco, California on April 13 - 15, 1993. Volume 312, Materials Research Society,

Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Personal Author(s) : Fuoss, Paul ; Tsao, Jeffrey ; Kisker, David W. ; Zangwill, ndrew ; Kuech, Thomas

Report Date : 15 APR 1993

Pagination or Media Count : 360

Abstract : Partial contents: From Adatom Migration to Chemical Kinetics: Models for MBE, MOMBE and MOCVD; The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs (001); Evolution of Roughness on InP Layers Observed by Scanning Force Microscopy; Low Temperature Si Homoepitaxy: Effects of Impurities on Microstructure; Compositional Ordering in Semiconductor Alloys; Evolving Surface Cusps During Strained Layer Epitaxy; Effects of Minimizing the Driving Force for Epitaxy in the Ge/Si(001) System; A Comparison of Two Epitaxial Formation Mechanisms in the SiGe System; The Role of Vertical Exchange in the Growth of GaAs/AlAs Lateral and Vertical Superlattices; Surface Ordering of MBE Grown 001 Ga05A105As-A Theoretical Study; and Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films.

Descriptors :   *EPITAXIAL GROWTH, *CRYSTAL GROWTH, SYMPOSIA, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, ROUGHNESS, SILICON, SEMICONDUCTORS, ALLOYS, GERMANIUM, ALUMINUM ARSENIDES, KINETICS, THERMODYNAMICS, DEFECT ANALYSIS, THIN FILMS, QUANTUM WELLS, PHOTOLUMINESCENCE, RELAXATION, DISLOCATIONS, DIFFUSION, ATOMS, NUCLEATION, INDIUM ANTIMONIDES, WAFERS, COBALT, YTTRIUM, BARIUM, COPPER, OXIDES, ANNEALING, ETCHING.

Subject Categories : Crystallography
      Solid State Physics
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE