Accession Number : ADA271292

Title :   N-P-(P(+)-N(+))-N Al(y)Ga(1-y)As-GaAs-In(x)Ga(1-x)As Quantum Well Laser with p(+)-n(+)GaAs-InGaAs Tunnel Contact on n GaAs,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Sugg, A. R. ; Chen, E. I. ; Richard, T. A. ; Maranowski, S. A. ; Holonyak, N., Jr

Report Date : 17 MAY 1993

Pagination or Media Count : 4

Abstract : Data are presented on the growth, by metalorganic chemical vapor deposition, and fabrication of n-p (n-up) AlGaAs-GaAs-InGaAs quantum-well heterostructure lasers using a p+-n+ GaAs-InGaAs reverse-biased tunnel junction to contact the n-type GaAs substrate. The lasers operate continuously at 300 K with a threshold of approx. 37 mA for a 10-micrometer-wide native-oxide-defined gain-guided stripe (cavity length approx. 375 micrometers). Comparison tunnel junctions similar to those used in the diode lasers are also fabricated and exhibit low reverse-biased series resistances ( approx. 2.2 ohms, area approx. 4.5 X larger). Quantum-well lasers, Tunnel-junction contact, Carbon doping, III-V Native oxides

Descriptors :   *ALUMINUM GALLIUM ARSENIDES, *INDIUM, *GALLIUM ARSENIDES, *LASERS, *QUANTUM WELLS, CARBON, CAVITIES, COMPARISON, DIODES, DOPING, FABRICATION, GAIN, REPRINTS, CHEMICALS, VAPOR DEPOSITION, CRYSTALS, JUNCTIONS, LENGTH, OXIDES, RESISTANCE, STRIPES, SUBSTRATES, TUNNELS.

Subject Categories : Lasers and Masers
      Electrical and Electronic Equipment
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE