Accession Number : ADA271875
Title : Transport in Microstructures in the Microwave and Millimeter-Wave Regime.
Descriptive Note : Final rept. 1 Apr 90-31 Mar 93,
Corporate Author : MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB
Personal Author(s) : Norris, Theodore B. ; Whitaker, John F. ; Mourou, Gerard A.
Report Date : 22 OCT 1993
Pagination or Media Count : 238
Abstract : This report summarizes the work performed during a 3-year URI program on Transport in Microstructures in the Microwave and Millimeter-Wave Regime. It describes significant achievements in both basic investigations of transport physics and in applications to high-speed electronics and optoelectronics. Fundamental advances were made in measurements of transport in semiconductors under high-field conditions. A variety of ultrafast optical and optoelectronic techniques were used to perform the most comprehensive experimental study to date of the dynamics of high-field transport in semiconductors, including the first observations of the ballistic acceleration of electrons, of field-dependent velocity overshoot, and of the dynamics of impact ionization. Carrier dynamics in low-temperature-grown (LT) semiconductors and high-critical-temperature superconductors were investigated, and optimum materials growth conditions determined. The work on LT GaAs led to significant advances in high speed electronic measurement, including electro-optic network analysis up to 300 GHz bandwidth, and novel photoconductive probes with ps response, high spatial resolution, and microvolt sensitivity. LT GaAs MSM photodetectors were developed with bandwidths up to 375 GHz and both high sensitivity and large-signal capability, representing significant improvements over the prior state of the art. Novel femtosecond lasers were developed, which made possible the development of new high speed measurement techniques. Ultrafast optics, High-speed electronics, Electron transport in solids, Resonant tunneling time-resolved RHEED, Fast modulators, Fast detectors, LT-GaAs, Ballistic transport
Descriptors : *ELECTRON TRANSPORT, *LASERS, *PHOTODETECTORS, *ELECTROOPTICS, ACCELERATION, BALLISTICS, BANDWIDTH, CRITICAL TEMPERATURE, DETECTORS, ELECTRONS, FIELD CONDITIONS, GALLIUM ARSENIDES, HIGH SENSITIVITY, IMPACT, IONIZATION, LOW TEMPERATURE, MICROWAVES, MILLIMETER WAVES, MODULATORS, NETWORKS, OPTICS, PROBES, RESOLUTION, RESPONSE, SEMICONDUCTORS, SENSITIVITY, SIGNALS, SOLIDS, STATE OF THE ART, SUPERCONDUCTORS, TEMPERATURE, TIME, TRANSPORT, TUNNELING, VELOCITY, WORK, MICROSTRUCTURE, ELECTRON ACCELERATORS, EPITAXIAL GROWTH, IMPACT ACCELERATION, TUNNELING(ELECTRONICS), HIGH VELOCITY, HIGH FREQUENCY, MOLECULAR BEAMS.
Subject Categories : Electrical and Electronic Equipment
Electrooptical and Optoelectronic Devices
Lasers and Masers
Optical Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE