Accession Number : ADA271990

Title :   International Symposium on Atomic Layer Epitaxy (2nd) Held in Raleigh, North Carolina on June 2-5, 1992. Program.

Corporate Author : AMERICAN VACUUM SOCIETY NEW YORK

Report Date : JUN 1992

Pagination or Media Count : 92

Abstract : Partial Contents: Cost Effective Processing By ALE; Molecular Layer Epitaxy of GaAs; Mechanisms of Atomic Layer Epitaxy of GaAs; The Mechanisms and Kinetics of Surface Reactions in Atomic Layer Epitaxy of GaAs Using Trimethygallium; The Surface Chemistry and Kinetics of GaAs Atomic Layer Epitaxy; Real-Time Optical Diagnostics for Measuring and Controlling Epitaxial Growth; In Situ Monitoring and Controlling of Atomic Layer Epitaxy by Surface Photo-Absorption; Surface Photo-Absorption (SPA) Study of the Laser-Assisted Atomic Layer Epitaxial Growth Process of Gallium Arsenide; In Situ Optical Characterization of GaAs and InP Surfaces in Chloride Atomic Layer Epitaxy.

Descriptors :   *ATOMIC STRUCTURE, *LAYERS, *EPITAXIAL GROWTH, SYMPOSIA, PROCESSING, COST EFFECTIVENESS, MOLECULAR STRUCTURE, GALLIUM ARSENIDES, KINETICS, SURFACE REACTIONS, REAL TIME, DIAGNOSTIC EQUIPMENT, OPTICAL EQUIPMENT, ABSORPTION, LASERS, INDIUM PHOSPHIDES, CHLORIDES, ETCHING, GROUP IV COMPOUNDS, SILICON CARBIDES, GERMANIUM, DIAMONDS, NITRIDES, OXIDES.

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Crystallography
      Physical Chemistry
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE