Accession Number : ADA272830
Title : Single Crystal Diamond Thin Films.
Descriptive Note : Progress rept. 28 Jul 92-28 Jul 93,
Corporate Author : EPION CORP BEDFORD MA
Personal Author(s) : Kirkpatrick, Allen
Report Date : OCT 1993
Pagination or Media Count : 32
Abstract : The objective of this program is to employ variations of high temperature ion implantation-outdiffusion processing to promote heteroepitaxial nucleation of diamond on a foreign substrate. The program has involved development of ion implantation apparatus with specialized capabilities. The apparatus has been utilized to investigate effects produced by a range of carbon implantation into copper process variations. Effects of other ions such as hydrogen, oxygen and fluorine in addition to carbon have been investigated. Diamond, Copper, Carbon, Ion implantation, Nucleation.
Descriptors : *DIAMONDS, *HIGH TEMPERATURE, *SINGLE CRYSTALS, *THIN FILMS, CARBON, COPPER, FLUORINE, FOREIGN, HYDROGEN, ION IMPLANTATION, NUCLEATION, OXYGEN, PROCESSING, SUBSTRATES, DIFFUSION, EPITAXIAL GROWTH.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE