Accession Number : ADA272904

Title :   Synthesis and Properties of Mismatched Heterojunction/Substrate Interfaces.

Descriptive Note : Final rept. 27 Aug 91-16 Aug 93,

Corporate Author : CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G

Personal Author(s) : Winder, H. H.

Report Date : 08 NOV 1993

Pagination or Media Count : 35

Abstract : This report describes work performed at the University of California, San Diego, on the synthesis and characterization of molecular beam epitaxially-grown heterostructures of In(x)Ga(l-x)As and In(y)Al(1-y)As grown on GaAs substrates using a compositionally step-graded buffer layer which relaxes the mismatch strain between them by more than 90%. The electrical and the galvanomagnetic properties of the two dimensional electron gas produced by modulation doping in such heterojunctions are related to the strain relaxation of the buffer, the impurity doping density, alloy scattering as a function of composition and dislocation scattering at the heterojunction interfaces. III-V Compound heterojunctions, Strain-relaxation at interfaces, Quantum wells, Two-dimensional electron gasses.

Descriptors :   *HETEROJUNCTIONS, *INTERFACES, *SUBSTRATES, *ELECTRICAL PROPERTIES, ALLOYS, BUFFERS, DENSITY, DISLOCATIONS, DOPING, ELECTRON GAS, ELECTRONS, FUNCTIONS, GALLIUM ARSENIDES, IMPURITIES, LAYERS, MODULATION, MOLECULAR BEAMS, QUANTUM WELLS, RELAXATION, SCATTERING, SYNTHESIS, TWO DIMENSIONAL, STRAIN(MECHANICS), EPITAXIAL GROWTH, INTEGRATED CIRCUITS, ELECTROOPTICS, CRYSTAL STRUCTURE.

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment
      Crystallography
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE