Accession Number : ADA273781
Title : Characterization of Semi-Insulating Gallium Arsenide.
Descriptive Note : Final rept. 18 Nov 92-17 Nov 93,
Corporate Author : WESTERN WASHINGTON UNIV BELLINGHAM DEPT OF PHYSICS AND ASTRONOMY
Personal Author(s) : Blakemore, John S.
Report Date : 29 NOV 1993
Pagination or Media Count : 22
Abstract : The project was established 11-18-92 to continue for 12 months. Its purpose has been electrical and optical characterization of samples from semi-insulating (SI) melt-grown crystals of gallium arsenide (GaAs). As a further definition of the project's purpose, the primary goal has been to assist NRL in assessing the properties of SI GaAs crystals grown at NRL, by the vertical zone melt (VZM) method. A second aspect of this characterization work has involved samples from SI GaAs crystals grown by various commercial vendors, including samples of pre-synthesized GaAs evaluated for its suitability as starting 'feedstock' for VZM growth. Measurements made at Western Washington University (WWU) under the terms of this project accord with a Statement of Work provided at the outset. These have included (a) low-field dc electrical transport data for SI GaAs samples, as functions of temperature; (b) near-infrared (NIR) transmittance/absorption spectra of polished slabs, with data concerning the well-known EL2 defect determined from NIR absorption strength and spectral form; (c) mid-IR data on absorption caused by carbon acceptors in SI GaAs.
Descriptors : *GALLIUM ARSENIDES, *ELECTRICAL PROPERTIES, *OPTICAL PROPERTIES, ABSORPTION SPECTRA, ANNEALING, CARBON, CRYSTAL GROWTH, ELECTRON MOBILITY, MEASUREMENT, MELTS, SILICON, STARTING, TEMPERATURE, TRANSMITTANCE, TRANSPORT, INTEGRATED CIRCUITS.
Subject Categories : Crystallography
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE