Accession Number : ADA275197

Title :   Silicon Germanium Carbon Heteroepitaxial Growth on Silicon.

Descriptive Note : Final technical rept. 15 Jul 92-14 Oct 93,

Corporate Author : ARIZONA STATE UNIV TEMPE DEPT OF CHEMICAL AND BIOENGINEERING

Personal Author(s) : Mayer, James W.

Report Date : 14 OCT 1993

Pagination or Media Count : 7

Abstract : This project represents the initiation of band-gap engineering of Si-based devices at Arizona State University by James W. Mayer. While at Cornell, he directed the Microscience and Technology program supported by the Semiconductor Research Corporation. His Work on heteoepitaxy of SiGe on silicon convinced him that heteroepitaxy on Si was a viable technique for forming smaller band gap layers on silicon but the requirement was for larger energy-gap materials. In the fall of 1991, James Mayer visited Tom Picraux of Sandia National Laboratories and Clarence Tracy of Motorola Semiconductor Products to discuss the possibility of a joint program to investigate Silicon Germanium Carbon Heteroepitaxial Growth on Silicon. This represented a new research and development initiate for band gap engineering.

Descriptors :   *SILICON, *EPITAXIAL GROWTH, *GERMANIUM, *CARBON, *SEMICONDUCTORS, LAYERS, SOLID PHASES, ION IMPLANTATION.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Crystallography
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE