Accession Number : ADA275811
Title : Innovative Optoelectronic Materials and Structures Using OMVPE.
Descriptive Note : Annual rept. 1 Jan-31 Dec 93,
Corporate Author : CORNELL UNIV ITHACA NY DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Shealy, James R.
Report Date : 14 FEB 1994
Pagination or Media Count : 18
Abstract : An advanced OMVPE process is being developed for the deposition of III-V semiconductor materials and structures. There are important optoelectronic device structures which can not be realized be conventional means. The new OMVPE apparatus combines the multichamber reaction cell with deep UV photo-assisted growth and modulation flow epitaxial techniques. Using a combination of such processes, the-growth temperature requirements for III-V alloys can be substantially reduced. Selective growth on a sub-micron scale will be attempted with in-situ interference holography. The materials and techniques developed in this research program will result in Significant simplifications to the fabrication o sequence required to realize complex integrated optoelectronic circuits. Semiconductors, Optoelectronics, Crystal growth.
Descriptors : *ALLOYS, *CRYSTAL GROWTH, *MATERIALS, *SEMICONDUCTORS, *STRUCTURES, *OPTICAL EQUIPMENT, *ELECTRONIC EQUIPMENT, CELLS, CIRCUITS, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, DEPOSITION, FABRICATION, FLOW, HOLOGRAPHY, INTERFERENCE, GROUP V COMPOUNDS, MODULATION, REQUIREMENTS, SCALE, ULTRAVIOLET EQUIPMENT, SEQUENCES, TEMPERATURE, ORGANOMETALLIC COMPOUNDS, VAPOR PHASES, EPITAXIAL GROWTH.
Subject Categories : Electrooptical and Optoelectronic Devices
Metallurgy and Metallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE