Accession Number : ADA283152

Title :   Origin of Optical Anisotropy in Strained In(x)Ga(1-x)As/InP and In(y)Al(1-y)As/InP Heterostructures,

Corporate Author : NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s) : Bennett, B. R. ; del Alamo, J. A. ; Sinn, M. T. ; Peiro, F. ; Cornet, A.

Report Date : 10 OCT 1993

Pagination or Media Count : 32

Abstract : Optical anisotropy in mismatched In(x)Ga(1-x)As/InP and In(y)Al(1-y)As/InP heterostructures has been investigated by variable azimuthal angle ellipsometry and reflectance difference spectroscopy. The two approaches are shown to yield strongly correlated results. A comparison to high resolution x-ray diffraction, transmission electron microscopy, and atomic force microscopy studies indicates that large optical anisotropies are associated with surface roughening that results from three dimensional growth. Our findings demonstrate that fast and non-destructive measurements of optical anisotropy can provide important information about the growth mode and crystalline quality of strained epitaxial layers

Descriptors :   *SEMICONDUCTORS, *ALLOYS, *OPTICAL PROPERTIES, *ANISOTROPY, *INDIUM PHOSPHIDES, *GALLIUM ARSENIDES, *ALUMINUM ARSENIDES, ANGLES, AZIMUTH, ELLIPSOMETERS, REFLECTANCE, SPECTROSCOPY, HIGH RESOLUTION, X RAY DIFFRACTION, ELECTRON MICROSCOPY, SURFACES, ROUGHNESS, CRYSTALS, EPITAXIAL GROWTH.

Subject Categories : Properties of Metals and Alloys
      Optics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE