Accession Number : ADA285317
Title : Heteroepitaxy of Ternary SiGeC Alloys on Si for Bipolar Transistors.
Descriptive Note : Final rept.,
Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE SCIENCE
Personal Author(s) : Mayer, James W.
Report Date : 14 JUL 1994
Pagination or Media Count : 12
Abstract : The final report covers (1) The development of synthetic methods and detailed phase and compositional characterization of our cubic SiC-GeC solid solutions and diamond structured SiGeC thin films (2) Our preliminary findings on bandgap measurements (3) The development of a novel technique for in situ observation of SiGeC CVD in an environmental electron microscope. We used this technique to deposit films that are lattice matched to Silicon. The work was carried out in the Chemical Vapor Deposition Laboratory (by graduate student Michael Todd, postdoctoral research associate Philippe Bonneau, and Professor John Kouvetakis) and the Ion Beam Facility (Barry Wilkens), with assistance from the staff of the High Resolution Electron Microscopy Group (Dr. Renu Sharma, and Professor David Smith) at Arizona State University. Vibrational characterization and bandgap studies were carried out by Nigel Cave at Motorola Phoenix.
Descriptors : *SILICON, *EPITAXIAL GROWTH, *TERNARY COMPOUNDS, *ALLOYS, *GERMANIUM, *CARBIDES, *BIPOLAR TRANSISTORS, DEPOSITS, ELECTRON MICROSCOPES, ELECTRON MICROSCOPY, HIGH RESOLUTION, ION BEAMS, LABORATORIES, MEASUREMENT, MICROSCOPY, OBSERVATION, PHASE, SOLID SOLUTIONS, THIN FILMS, SYNTHESIS, CHEMICAL VAPOR DEPOSITION.
Subject Categories : Metallurgy and Metallography
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE