Accession Number : ADA288601

Title :   Development of HTS SNS Devices on Large Area Substrates by Single Source MOCVD.

Descriptive Note : Final rept. 4 Jun 93-28 Feb 94,

Corporate Author : CONDUCTUS INC SUNNYVALE CA

Personal Author(s) : Truman, J. K.

PDF Url : ADA288601

Report Date : 18 MAY 1994

Pagination or Media Count : 16

Abstract : A novel, single-source metalorganic chemical vapor deposition (SSMOCVD) technique has shown exceptional promise for the growth of epitaxial oxide films and multilayers on large area substrates, as needed for the commercial-scale production of high temperature superconductor devices and circuits. In this contract the SSMOCVD technique was applied to growth of YBa2Cu3O(7-x) and CaRuO3 films and multilayers for the fabrication of superconductor-normal-superconductor Josephson junctions. A process was developed for the growth of epitaxial CaRuO3 films by SSMOCVD, which was the first reported growth of CaRuO3 by MOCVD. Also, a process was developed for the in situ growth of epitaxial YBa2Cu3O(7-x)/CaRuO3 multilayers by SSMOCVD. Finally, epitaxial SNS edge junctions were fabricated and tested which used a top YBCO/CaRuO3 bilayer grown in situ by SSMOCVD and a base SrTiO3/YBa2Cu3O(7-x) bilayer grown in situ by pulsed laser ablation.

Descriptors :   *ORGANOMETALLIC COMPOUNDS, *CHEMICAL VAPOR DEPOSITION, *SUBSTRATES, *HIGH TEMPERATURE SUPERCONDUCTORS, ABLATION, CALCIUM, PRODUCTION, EDGES, FILMS, EPITAXIAL GROWTH, PULSED LASERS, LASERS, OXIDES, COPPER, CIRCUITS, YTTRIUM BARIUM, RUTHENIUM, STRONTIUM, TITANATES, JOSEPHSON JUNCTIONS.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE