Accession Number : ADA288604
Title : Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.
Descriptive Note : Monthly progress rept. no. 4.
Corporate Author : ELECTRO-OPTEK CORP TORRANCE CA
PDF Url : ADA288604
Report Date : 1993
Pagination or Media Count : 2
Abstract : During this program period, we have performed large area growth of device-quality InAsSb films on 2-inch Si substrates. We have fabricated InAsSb films of uniform thickness, which are suitable for dense detector arrays. To obtain higher quantum efficiency, a pin structure for LWIR detector has been proposed and delineated. Results obtained in the last month are presented and discussed in the following sections.
Descriptors : *EPITAXIAL GROWTH, *MOLECULAR BEAMS, *LONG WAVELENGTHS, * ARRAYS, THICKNESS, DETECTORS, GROWTH(GENERAL), FILMS, FABRICATION, SUBSTRATES, SILICON, HIGH DENSITY, QUANTUM EFFICIENCY, INDIUM, ANTIMONY, ARSENIC, INFRARED EQUIPMENT.
Subject Categories : Inorganic Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE