Accession Number : ADA288604

Title :   Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Descriptive Note : Monthly progress rept. no. 4.

Corporate Author : ELECTRO-OPTEK CORP TORRANCE CA

PDF Url : ADA288604

Report Date : 1993

Pagination or Media Count : 2

Abstract : During this program period, we have performed large area growth of device-quality InAsSb films on 2-inch Si substrates. We have fabricated InAsSb films of uniform thickness, which are suitable for dense detector arrays. To obtain higher quantum efficiency, a pin structure for LWIR detector has been proposed and delineated. Results obtained in the last month are presented and discussed in the following sections.

Descriptors :   *EPITAXIAL GROWTH, *MOLECULAR BEAMS, *LONG WAVELENGTHS, * ARRAYS, THICKNESS, DETECTORS, GROWTH(GENERAL), FILMS, FABRICATION, SUBSTRATES, SILICON, HIGH DENSITY, QUANTUM EFFICIENCY, INDIUM, ANTIMONY, ARSENIC, INFRARED EQUIPMENT.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE