Accession Number : ADA288607

Title :   Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Descriptive Note : Monthly rept. no. 5.

Corporate Author : ELECTRO-OPTEK CORP TORRANCE CA

PDF Url : ADA288607

Report Date : 1993

Pagination or Media Count : 2

Abstract : During this program period, we have designed a readout circuit based on cryo CMOS technology with device features of 1.0 micron dimensions. The input circuit as depicted in Fig. 1 uses a direct injection approach and the cell is 2 mil x 2 mil dimension. The concept of direct injection readout is also applied for the InSb/InAsSb pin detector, since the reverse bias impedance of pin is reasonably high.

Descriptors :   *ARRAYS, *EPITAXIAL GROWTH, *MOLECULAR BEAMS, *LONG WAVELENGTHS, *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, INPUT, INJECTION, DETECTORS, SUPERLATTICES, FABRICATION, CIRCUITS, IMPEDANCE, BIAS, INDIUM, ANTIMONY, READ OUT TECHNIQUES, ARSENIC, PINS, CRYOGENICS.

Subject Categories : Inorganic Chemistry
      Crystallography
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE