Accession Number : ADA288723
Title : Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.
Descriptive Note : Monthly rept. no. 3.
Corporate Author : ELECTRO-OPTEK CORP TORRANCE CA
PDF Url : ADA288723
Report Date : 1994
Pagination or Media Count : 3
Abstract : During this reporting period, we have performed the epitaxial growth of fluoride buffer on Si substrate. A single crystal BaF2 epilayer with IR transparency in the 2- 12 micrometers ranges and smooth surface is found suitable as a lattice matching buffer layer. We have also proceeded to optimize the growth of InAsSb films. Results obtained so far are presented and briefly discussed in this report.
Descriptors : *FABRICATION, *EPITAXIAL GROWTH, *INFRARED TRANSMITTERS, BUFFERS, X RAY DIFFRACTION, ARRAYS, SINGLE CRYSTALS, SUBSTRATES, MOLECULAR BEAMS, SILICON, FLUORIDES, BARIUM HALIDES, SOLID STATE CHEMISTRY, DIFFRACTION ANALYSIS.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE