Accession Number : ADA288723

Title :   Fabrication of Long Wavelength Array by In-Situ Molecular Beam Epitaxy.

Descriptive Note : Monthly rept. no. 3.

Corporate Author : ELECTRO-OPTEK CORP TORRANCE CA

PDF Url : ADA288723

Report Date : 1994

Pagination or Media Count : 3

Abstract : During this reporting period, we have performed the epitaxial growth of fluoride buffer on Si substrate. A single crystal BaF2 epilayer with IR transparency in the 2- 12 micrometers ranges and smooth surface is found suitable as a lattice matching buffer layer. We have also proceeded to optimize the growth of InAsSb films. Results obtained so far are presented and briefly discussed in this report.

Descriptors :   *FABRICATION, *EPITAXIAL GROWTH, *INFRARED TRANSMITTERS, BUFFERS, X RAY DIFFRACTION, ARRAYS, SINGLE CRYSTALS, SUBSTRATES, MOLECULAR BEAMS, SILICON, FLUORIDES, BARIUM HALIDES, SOLID STATE CHEMISTRY, DIFFRACTION ANALYSIS.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE