Accession Number : ADA288769
Title : A Theoretical Analysis of Strain In GaN and Its Effects on Carrier Conductivity.
Descriptive Note : Final rept. 1 May 92-30 Apr 94,
Corporate Author : VIRGINIA UNIV CHARLOTTESVILLE DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Shur, Michael ; Money, John M.
PDF Url : ADA288769
Report Date : DEC 1994
Pagination or Media Count : 17
Abstract : We performed an ensemble Monte Carlo simulation of the electron transport in gallium nitride (GaN). Our calculation showed that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. We found that, in a GaN-AIN-GaN 515 structure, the strain-induced electric fields can shift the flat band voltage and produce an accumulation region on one side and the depletion region on the other side of the AIN insulator. We used our theory, the current-voltage measurements and the capacitance.voltage measurements of the GaN-AIN-GaN 515 structures for quantitative characterization of the degree of the AIN film relaxation depending on the film thickness. Our results show that the 30 A AIN film is slightly relaxed, the 60 A film data show well-developed relaxation process, and the 100 A structure is almost fully relaxed. Out data indicate that the low bound of the conduction band offset for the AINIGaN heterointerface is close to 1 eV.
Descriptors : *ELECTRON TRANSPORT, *CHARGE CARRIERS, *CONDUCTION BANDS, *SOLID STATE ELECTRONICS, DEPLETION, THICKNESS, VOLTAGE, ELECTRIC FIELDS, STRAIN(MECHANICS), MONTE CARLO METHOD, ELECTRICAL CONDUCTIVITY, RELAXATION, INVERSION, ELECTRIC CURRENT, ELECTRON TRANSFER, PIEZOELECTRIC EFFECT, NITRIDES, SOLID STATE PHYSICS, ELECTRICAL MEASUREMENT, GALLIUM COMPOUNDS, SURFACE TENSION.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE