Accession Number : ADA289053

Title :   High-Density Plasma Source for Large-Area Chemical Vapor Deposition of Diamond Films.

Descriptive Note : Monthly rept. 1 Nov-30 Nov 94,

Corporate Author : SCIENCE RESEARCH LAB INC SOMERVILLE MA

Personal Author(s) : Chen, Xing

PDF Url : ADA289053

Report Date : 15 DEC 1994

Pagination or Media Count : 4

Abstract : During this program Science Research Laboratory (SRL) and the Plasma Processing Group in the Department of Chemical Engineering at MIT are developing a large-area, directed plasma/atomic beam source for diamond deposition. The plasma source is based on an inductively-driven plasma accelerator that efficiently produces a high density (1014-1017 cm-3) plasma over an area of 0.1-1 m2. The goal of this effort is to experimentally demonstrate the technical feasibility of employing the plasma source for high-throughput diamond deposition, through characterization of plasma parameters and preliminary diamond deposition experiments. A reactor design study will also be completed during Phase 1, leading to an engineering design of a large-area plasma reactor for Phase H implementation. The period of performance is from 30 September 1994 to 31 March 1995.

Descriptors :   *PLASMAS(PHYSICS), *CHEMICAL VAPOR DEPOSITION, PROCESSING, THIN FILMS, FABRICATION, DIAMONDS, FEASIBILITY STUDIES, HIGH DENSITY, LANGMUIR PROBES, CHEMICAL ENGINEERING, PARTICLE BEAMS.

Subject Categories : Industrial Chemistry and Chemical Processing
      Plasma Physics and Magnetohydrodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE