Accession Number : ADA289275
Title : Boron-induced Morphology Changes in Silicon CVD Growth: A Scanning Tunneling Microscopy Study.
Descriptive Note : Interim rept.,
Corporate Author : WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY
Personal Author(s) : Hamers, Robert J. ; Wang, Yajun
PDF Url : ADA289275
Report Date : 20 DEC 1994
Pagination or Media Count : 10
Abstract : Scanning tunneling microscopy has been used to investigate the influence of surface boron on silicon growth via chemical vapor deposition (CVD). The presence of boron-induced reconstructions on the Si(001) surface dramatically changes the surface morphology during subsequent CVD growth of silicon using disilane at 815 Kelvin. Boron-induced reconstructions inhibit the lateral diffusion of silicon atoms from terraces to step edges, leading to greatly enhanced island nucleation, and also reduce the local surface reactivity toward disilane. Strong segregation of boron to the growth surface allows the enhanced island nucleation to persist to subsequent terraces during multilayer CVD growth of silicon, producing a rough but epitaxial surface.
Descriptors : *MORPHOLOGY, *CHEMICAL VAPOR DEPOSITION, *SILICON, *BORON, SCANNING, TUNNELING(ELECTRONICS), ELECTRONIC SCANNERS, REACTIVITIES, EPITAXIAL GROWTH, ATOMS, NUCLEATION, MICROSCOPY, ELECTRON MICROSCOPY, SURFACES, SURFACE PROPERTIES, SILANES, DIFFUSION, ISLANDS.
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE