Accession Number : ADA289296
Title : Microwave Characterization of Sub-Micron N- and P- Channel MOSFETs Fabricated with Thin Film Silicon-On-Sapphire.
Descriptive Note : Professional paper,
Corporate Author : NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA
Personal Author(s) : Chang, C. E. ; Asbeck, P. M. ; de la Houssaye, P. R. ; Imthurn, G. ; Garcia, G. A.
PDF Url : ADA289296
Report Date : JUN 1994
Pagination or Media Count : 6
Abstract : This paper reports on microwave characteristics for n- and p- MOS transistors fabricated with thin-film Silicon-on-Sapphire technology . The gates were defined with I-line optical lithography, and ranged down to 0.5 micrometer (drawn dimension). The f sub t values of the transistors reach 22 GHz for the n-channel structures and 21 GEz for the p- channel devices. The PMOS results are significantly higher than found with other Si or III-V technologies, and can potentially lead to high performance complementary microwave circuits. Small signal transistor models are similar to the ones for GaAs FETs. Dependence of model parameters on gate length were determined.
Descriptors : *MICROWAVES, *FIELD EFFECT TRANSISTORS, *METAL OXIDE SEMICONDUCTORS, *MOSFET SEMICONDUCTORS, PARAMETERS, STRUCTURES, THIN FILMS, GATES(CIRCUITS), SAPPHIRE, LENGTH, SIGNALS, SILICON, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, N TYPE SEMICONDUCTORS, CHANNELS, TRANSISTORS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Radiofrequency Wave Propagation
Distribution Statement : APPROVED FOR PUBLIC RELEASE