Accession Number : ADA289356

Title :   Growth, Characterization and Device Development in Monocrystalline Diamond Films.

Descriptive Note : Quarterly Technical rept. 1 Oct-31 Dec 94,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s) : Davis, Robert F. ; Glass, Jeffrey T. ; Nemanich, R. J.

PDF Url : ADA289356

Report Date : DEC 1994

Pagination or Media Count : 18

Abstract : Bias-enhanced nucleation (BEN) has been employed with TiC(111) substrates for the disposition of oriented diamond particles. The orientation of all the particles was the same, as observed via SEM. Some particles showed evidence of azimuthal twist and tilt, most likely due to the approx. 18% lattice mismatch with the TiC. Raman spectra exhibited a strong feature at 1332/ cm(-), indicative of diamond, and smaller features at 1480/ cm and 1602/ cm due to sp(2)-bonded carbon. An increase in the duration of the BEN step and a reduction in the twinning are expected to increase the density of oriented particles. An optical analysis of the strain fields of point and line defects, and the distributions of these defects as well as the distribution of the optical centers in the diamond films has also been conducted. The nitrogen optical centers were uniformly distributed. Calculations indicated that line-type defects are far more detrimental to the stress than point defects.

Descriptors :   *FILMS, *DIAMONDS, *SINGLE CRYSTALS, DENSITY, OPTICAL PROPERTIES, CARBIDES, TRANSMISSION LINES, ELECTRIC FIELDS, SUBSTRATES, SEMICONDUCTORS, POINT DEFECTS, NITROGEN, DEFECTS(MATERIALS), PARTICLES, OPTICAL ANALYSIS, TITANIUM, AZIMUTH, RAMAN SPECTRA, BREAKDOWN(ELECTRONIC THRESHOLD), TWIST(MOTION).

Subject Categories : Inorganic Chemistry
      Coatings, Colorants and Finishes
      Laminates and Composite Materials
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE