Accession Number : ADA289683
Title : Annealing of Radiation Damaged Gallium Arsenide Solar Cells by Laser Illumination.
Descriptive Note : Master's thesis,
Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Personal Author(s) : Kramer, Richard D.
PDF Url : ADA289683
Report Date : SEP 1994
Pagination or Media Count : 91
Abstract : In this research, preliminary results of a new approach for annealing previously irradiated Gallium Arsenide solar cells is reported. This technique examines the use of laser illumination to induce Forward-Biased current annealing. Five GaAs solar cells were irradiated with 65 MeV electrons at varying fluence levels. Visible laser light produced a 0.5 A/sq cm forward-biased current density and raised the solar cell temperature by 30 deg C. Ten to fifteen percent recovery of degraded parameters was achieved in four of the five tested cells. The results show that a laser can produce some annealing in radiation damaged GaAs solar cells. Further investigation into the results also indicate that the 65 MeV energy level of the electron irradiation could have caused unrecoverable permanent damage to the solar cells. Follow up research of this annealing technique should be conducted on GaAs cells that are being irradiated at a lower energy level as well as lower fluence level. Repetitive annealing of lightly damaged cells in previous research has provided appreciative recovery using forward bias current techniques. One can expect similar results using the laser induced annealing technique proposed in this research. (jg)
Descriptors : *ANNEALING, *GALLIUM ARSENIDES, *ILLUMINATION, *LASER BEAMS, *SOLAR CELLS, *RADIATION DAMAGE, FORWARD AREAS, DAMAGE, TEMPERATURE, CELLS, LIGHT, THESES, LASERS, LOW ENERGY, LOW LEVEL, ELECTRON IRRADIATION, BIAS.
Subject Categories : Inorganic Chemistry
Lasers and Masers
Nuclear Radiation Shield, Protection & Safety
Distribution Statement : APPROVED FOR PUBLIC RELEASE