Accession Number : ADA289841
Title : The In Situ Observation of Epitaxial Diamond Thin Film Nucleation and Growth Using Emission Electron Microscopy.
Descriptive Note : Semiannual technical rept. 1 Jan-30 Jun 94,
Corporate Author : OHIO UNIV ATHENS DEPT OF PHYSICS
Personal Author(s) : Kordesch, Martin E.
PDF Url : ADA289841
Report Date : 02 JAN 1995
Pagination or Media Count : 70
Abstract : A variety of natural and chemical vapor deposited diamond surfaces have been imaged using a photoelectron emission microscope and synchrotron radiation in the 4-18 eV and 250-350 eV range. Both images and spatially resolved total electron yield curves were acquired simultaneously. Near-edge spectra at the carbon is edge show a resonance due to graphite; the image intensity varies uniformly in proportion to the C 1s edge intensity. In the 4-18 eV range, no sharp features related to a photoemission threshold were observed below 7 eV in the electron yield curves on any of the specimens. The image contrast was not strongly dependant on the illumination energy. Natural type IIa diamond showed severe charging effects. (jg)
Descriptors : *EMISSION, *THIN FILMS, *DIAMONDS, *EPITAXIAL GROWTH, *NUCLEATION, *ELECTRON MICROSCOPY, CONTRAST, EDGES, THRESHOLD EFFECTS, ENERGY, INTENSITY, CHEMICAL VAPOR DEPOSITION, GRAPHITE, ILLUMINATION, CARBON, PHOTOELECTRIC EMISSION, IMAGES, DIFFUSION, SULFUR, PHOTOELECTRONS, SYNCHROTRON RADIATION, SHARPNESS.
Subject Categories : Inorganic Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE