Accession Number : ADA289953
Title : Design and Development of Low Noise, High Speed, High Electron Mobility Transistors (HEMTs).
Descriptive Note : Final rept. 1 May 92-31 Jul 94,
Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
Personal Author(s) : Kreskovsky, J. P. ; Grubin, H. L.
PDF Url : ADA289953
Report Date : SEP 1994
Pagination or Media Count : 125
Abstract : An investigation was undertaken to design and fabricate low noise, high speed InP-based HEMTs. The investigation consisted of several components: the development of quantum corrected hydrodynamics simulation codes; application of these codes to aid in design and optimization of HEMTs for low noise, high speed operation; and fabrication and testing of the resulting designs. Through the research effort, HEMTs of previously unobtained performance levels were designed and fabricated. These results showed that the use of simulation can play a significant and important role in extracting performance from proposed device Structures, and should be used as an integral part of the design process. (jg)
Descriptors : *HYDRODYNAMICS, *TRANSISTORS, *ELECTRON MOBILITY, *LOW NOISE, COMPUTER PROGRAMS, SIMULATION, OPTIMIZATION, HIGH RATE, QUANTUM WELLS, FABRICATION, CODING, OPERATION, EXTRACTION, INDIUM PHOSPHIDES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE