Accession Number : ADA289954

Title :   SOSDOR: Solid-State Device Simulator Code.

Corporate Author : DEFENCE RESEARCH ESTABLISHMENT OTTAWA (ONTARIO)

Personal Author(s) : Varga, L.

PDF Url : ADA289954

Report Date : OCT 1994

Pagination or Media Count : 25

Abstract : A 3-D solid state device simulator code, developed at DREO, is presented. The code uses a seven-point finite difference scheme to discretize Poisson's and the continuity equations. The equations are then solved using the Newton-Raphson iteration method. Additional information pertaining to griding, carrier mobility and recombination models as well as boundary condition types incorporated into the code is also presented. The source files of the code and the graphical interfaces are also described. The code was tested by simulating a PIN diode under no bias and under a 20V reverse bias condition. The simulation results are in excellent agreement with the results of simulation of the same device by the industry standard PADRE code. (AN)

Descriptors :   *COMPUTERIZED SIMULATION, *SEMICONDUCTOR DEVICES, *SOLID STATE ELECTRONICS, COMPUTER PROGRAMS, MATHEMATICAL MODELS, SIMULATORS, COMPARISON, CANADA, VOLTAGE, CURRENT DENSITY, BOUNDARIES, CODING, THREE DIMENSIONAL, FINITE DIFFERENCE THEORY, COMPUTER GRAPHICS, DOPING, COMPUTER FILES, ITERATIONS, PIN DIODES, CARRIER MOBILITY, IONIZING RADIATION, POISSON DENSITY FUNCTIONS.

Subject Categories : Computer Programming and Software
      Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE