Accession Number : ADA290103

Title :   Gordon Research Conference on Point Defects, Line Defects, and Interfaces in Semiconductors, Held in Plymouth, New Hampshire on July 31 - August 5, 1994.

Descriptive Note : Final rept.,

Corporate Author : GORDON RESEARCH CONFERENCES INC KINGSTON RI

Personal Author(s) : Stavola, Michael

PDF Url : ADA290103

Report Date : 05 AUG 1994

Pagination or Media Count : 18

Abstract : The technical program has continued to evolve and to deal with the hottest new issues , the field of defects. There were two sessions on defects in wide bandgap semiconductors like the group III nitrides and II-VI materials that are receiving much recent attention because of renewed interest in visible optical devices. The presentation of very fundamental research was mixed with device-related defect problems which led to well balanced sessions which should help the community to focus on important issues. Heteroepitaxy and related defect issues continue to play an important role. Talks on strain relief in SiGe epitaxial layers and on the interactions of defects with surfaces and interfaces were especially exciting and well received. Studies of point defects continue to generate exciting results. The talks by Johnson and Estreicher on hydrogen in semiconductors raised several controversial issues which were vigorously discussed. (jg)

Descriptors :   *INTERFACES, *SEMICONDUCTORS, *POINT DEFECTS, *DEFECTS(MATERIALS), OPTICAL EQUIPMENT, SYMPOSIA, INTERACTIONS, LAYERS, COMPOSITE MATERIALS, ENERGY GAPS, EPITAXIAL GROWTH, STRAIN(MECHANICS), HYDROGEN, SILICON, VISIBILITY, BROADBAND, GROUP III COMPOUNDS, GERMANIUM, NITRIDES.

Subject Categories : Crystallography
      Inorganic Chemistry
      Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE