Accession Number : ADA290467
Title : Raman and Photo-Modulated Reflectivity Studies of ZnTe/InAs Semiconductor Heterostructure Under Hydrostatic Pressure,
Corporate Author : MISSOURI UNIV-COLUMBIA DEPT OF PHYSICS AND ASTRONOMY
Personal Author(s) : Thomas, Robert J. ; Boley, Mark S. ; Chandrasekhar, H. R. ; Chandrasekhar, Meera ; Parks, C.
PDF Url : ADA290467
Report Date : 1994
Pagination or Media Count : 5
Abstract : The photo-modulated reflectivity spectrum of a biaxially-strained pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular beam epitaxy is studied as a function of applied hydrostatic pressure at 80K. With increasing hydrostatic compression, the biaxially compressive strain is progressively compensated by the pressure induced tensile strain. At approximately 55 kbars the epilayer becomes strain free, and is under a biaxial tension at higher pressures. The separation between the heavy hole and light hole signatures is superlinear in pressure, suggestive of a pressure dependent shear deformation potential constant for the valence and conduction bands. We also compare the pressure dependence of the Raman LO phonon of the ZnTe epilayer on InAs with that of a bulk ZnTe sample at 13K. The pressure dependent strain is found to be linear. Accurate values of the first order strain derivatives of the LO-phonons and mode Gruneisen constants are obtained.
Descriptors : *REFLECTIVITY, *HYDROSTATIC PRESSURE, COMPRESSION, REPRINTS, HETEROJUNCTIONS, ACCURACY, EPITAXIAL GROWTH, HIGH PRESSURE, STRAIN(MECHANICS), SEMICONDUCTORS, MOLECULAR BEAMS, TENSION, ZINC TELLURIDES, HYDROSTATICS, HETEROGENEITY, CONDUCTION BANDS, PHONONS, BIAXIAL STRESSES, RAMAN SPECTRA, COMPRESSIVE PROPERTIES, GRUNEISEN CONSTANT.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE