Accession Number : ADA290853
Title : Integrated Synthesis and Post-Processing of SiC and AlN.
Descriptive Note : Final rept. 15 Aug 89-15 May 93,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Kingon, A. I . ; Davis, R. F. ; Singh, A. K.
PDF Url : ADA290853
Report Date : 1994
Pagination or Media Count : 15
Abstract : Synthesis of nanocrystalline powders of SiC, A1N, Si Si3N4, TiN, TiC, TiO2 have been achieved by a non thermal microwave plasma reactor from vapor phase precursors. In the case of TiO2 the phase can be a metastable high pressure plasma (Beta-TiO2). Nanoparticles of Si and SiOx displayed strong red-orange photoluminescence. Two mechanisms for photoluminescence were identified one based on 3-D quantum confinement and a second based on natural surface oxides. Creep of fine grained (0.7micrometers) AlN has been studied for the first time. The mechanism was identified as being diffusion-accommodated grain-boundary sliding. (AN)
Descriptors : *ALUMINUM COMPOUNDS, *SYNTHESIS(CHEMISTRY), *CERAMIC MATERIALS, *SILICON CARBIDES, QUANTUM CHEMISTRY, SILICON DIOXIDE, PRECURSORS, HIGH TEMPERATURE, PLASMAS(PHYSICS), PHOTOLUMINESCENCE, PARTICLE SIZE, SINGLE CRYSTALS, HIGH PRESSURE, VAPOR PHASES, CREEP, TITANIUM DIOXIDE, THERMAL STRESSES, METASTABLE STATE, REFRACTORY MATERIALS, GRAIN BOUNDARIES, SILICON NITRIDES, POLYCRYSTALLINE.
Subject Categories : Inorganic Chemistry
Ceramics, Refractories and Glass
Distribution Statement : APPROVED FOR PUBLIC RELEASE