Accession Number : ADA290857
Title : The Junction Characteristics and Current Conduction Mechanisms of GaInP2 n+p Diodes and Solar Cells.
Descriptive Note : Doctoral thesis,
Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Personal Author(s) : Reinhardt, Kitt C.
PDF Url : ADA290857
Report Date : DEC 1994
Pagination or Media Count : 256
Abstract : This work involves an investigation of GaInP2 n+p diode and solar cell dark current mechanisms, the defect centers that affect these mechanisms, and the response of dark current and solar cell photovoltaic parameters to I MeV electron irradiation and thermal annealing. Dark current due to carrier diffusion, recombination, and tunneling were identified, and recombination current was found to dominate at the maximum power-point voltage of the GaInP2 solar cells. Carrier recombination was found to occur via defect centers at the perimeter and within the bulk of the junction. Two deep majority-hole trap centers were found at Ea1 = Et - Ev approx. 0.45eV and Ea2 = Et- Ev approx. 0.05eV. Dark current due to carrier tunneling was dominant in 'leaky' diodes and solar cells that contained line- like morphological defects believed to be due to lattice mismatch between GaInP2 and GaAs. The effects of 1 MeV electron irradiation and thermal annealing on solar cell and diode dark current mechanisms and efficiency were also studied. (jg)
Descriptors : *DIODES, *CONDUCTIVITY, *SOLAR CELLS, *JUNCTIONS, *GALLIUM PHOSPHIDES, ANNEALING, PARAMETERS, MORPHOLOGY, THESES, DEFECTS(MATERIALS), RESPONSE, DARKNESS, DIFFUSION, RECOMBINATION REACTIONS, TUNNELING, INDIUM, PHOTOVOLTAIC EFFECT, THERMAL RADIATION.
Subject Categories : Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE