Accession Number : ADA290937
Title : Ion Doped Quantum Well Lasers.
Descriptive Note : Annual rept. 30 Sep 93-30 Sep 94,
Corporate Author : SPIRE CORP BEDFORD MA
Personal Author(s) : Greenwald, Anton C.
PDF Url : ADA290937
Report Date : 06 FEB 1995
Pagination or Media Count : 31
Abstract : The objective of this research project is to fabricate erbium-doped light emitting diode lasers. Such lasers are expected to be temperature independent, frequency stable sources of 1538 nm light especially well suited for optical communications. During the first year of the project new volatile erbium-silylamide sources were synthesized for metalorganic chemical vapor deposition of doped III-V compound films, required for laser fabrication. Doping levels to 30 atomic percent were tested but the maximum substitutional dopant level was 0.02 percent. Carbon and nitrogen contaminant levels were minimized, while the amount of silicon left in the film was a function of deposition temperature. Narrow photo- and cathode-luminescence spectra were obtained from these films. Diffusion rates for erbium in gallium arsenide was higher than expected. Device studies are planned for the second year of the project. (jg)
Descriptors : *IONS, *QUANTUM WELLS, *LASERS, *DOPING, *ERBIUM, FREQUENCY, SOURCES, STABILITY, TEMPERATURE, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, RATES, FABRICATION, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, OPTICAL COMMUNICATIONS, SEMICONDUCTORS, CARBON, NITROGEN, SPECTRA, SILICON, CONTAMINANTS, DIFFUSION, LUMINESCENCE, RARE EARTH ELEMENTS, LIGHT EMITTING DIODES.
Subject Categories : Inorganic Chemistry
Quantum Theory and Relativity
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE