Accession Number : ADA290946
Title : Investigation of a Normal Incident High Performance P-type Strained Layer In(0.3)Ga(0.7)As/In(0.52)Al(0.48)As Quantum Well Infrared Photodetector.
Descriptive Note : Semi-annual progress rept. no. 3, 16 Jull 94-15 Feb 95,
Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Chu, Jerome T. ; Li, Sheng S.
PDF Url : ADA290946
Report Date : 15 FEB 1995
Pagination or Media Count : 44
Abstract : During this reporting period, we have made excellent progress towards the program goals. A significant achievement was made in the development of a new compressionally strained p-type GaAs/InGaAs QWIP grown on GaAs by MBE. This new QWIP achieved two color detection with detective peaks at 8.9 um an 8.4 micrometers in the LWIR band and 5.5 micrometers in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 70 K. The measured responsivity were found to be 24 mA/W and 45 mA/W for the two LWIR peaks respectively, while a responsivity of 13 mA/W was found for the MWIR peak; all at T=75 K. Th addition, a new InGaAs/AlGaAs on GaAs compressionally strained p QWIP was developed which exhibits extremely low dark currents and comparable responsivities when compared with the previous PCSL-QWIP. The measured responsivity was found to be 38 mA/W an 8mA/W at T=77 K, with the detective peaks at 7A and 5.5 micrometers, respectively. The detector is under BLIP conditions at T=63 K with applied biases from -3 V to +3 V. (jg)
Descriptors : *QUANTUM WELLS, *GALLIUM ARSENIDES, *ALUMINUM ARSENIDES, *PHOTODETECTORS, *INDIUM, *P TYPE SEMICONDUCTORS, DETECTION, COMPOSITE MATERIALS, EPITAXIAL GROWTH, SEMICONDUCTORS, MOLECULAR BEAMS, COLORS, TENSION, ABSORPTION, INFRARED RADIATION, BIAXIAL STRESSES, CURRENTS.
Subject Categories : Optical Detection and Detectors
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE