Accession Number : ADA291017

Title :   Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals.

Descriptive Note : Final rept. 1 Jun 91-31 Dec 94,

Corporate Author : JOINT INST FOR LAB ASTROPHYSICS BOULDER CO

Personal Author(s) : Leone, Stephen R.

PDF Url : ADA291017

Report Date : 31 DEC 1994

Pagination or Media Count : 32

Abstract : Laser vaporization of cryogenic films is employed to produce translationally fast atoms and radicals, and these kinetic-energy-enhanced species are used for studies of semiconductor etching; the results are important for the basic physics of electronics materials processing. Recent accomplishments include (1) production of a novel source of kinetic-energy-enhanced beams of Cl(2), Cl, and F atoms by laser vaporization, (2) observation of substantial enhancement of the etching rate and sustained etching of room temperature Si(100) by chlorine molecules with energies greater than or equal 3 eV, (3) scattering studies of translationally fast Cl(2) and Cl with Si(100), (4) velocity selection of the translationally fast beams for energy-resolved studies of dry etching processes, and (5) measurements of SiCl(x) product distributions as a function of substrate temperature. (jg)

Descriptors :   *ATOMS, *SEMICONDUCTORS, *LASERS, *ETCHING, *DEPOSITION, *CHEMICAL RADICALS, *ATOMIC BEAMS, VELOCITY, ELECTRONICS, SCATTERING, PRODUCTION, INTERACTIONS, MOLECULES, MATERIALS, PROCESSING, HIGH TEMPERATURE, AUGMENTATION, FILMS, SUBSTRATES, PHYSICS, FLUORINE, SILICON, KINETIC ENERGY, DRY MATERIALS, CRYOGENICS, CHLORINE, VAPORIZATION.

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Inorganic Chemistry
      Physical Chemistry
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE