Accession Number : ADA291017
Title : Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals.
Descriptive Note : Final rept. 1 Jun 91-31 Dec 94,
Corporate Author : JOINT INST FOR LAB ASTROPHYSICS BOULDER CO
Personal Author(s) : Leone, Stephen R.
PDF Url : ADA291017
Report Date : 31 DEC 1994
Pagination or Media Count : 32
Abstract : Laser vaporization of cryogenic films is employed to produce translationally fast atoms and radicals, and these kinetic-energy-enhanced species are used for studies of semiconductor etching; the results are important for the basic physics of electronics materials processing. Recent accomplishments include (1) production of a novel source of kinetic-energy-enhanced beams of Cl(2), Cl, and F atoms by laser vaporization, (2) observation of substantial enhancement of the etching rate and sustained etching of room temperature Si(100) by chlorine molecules with energies greater than or equal 3 eV, (3) scattering studies of translationally fast Cl(2) and Cl with Si(100), (4) velocity selection of the translationally fast beams for energy-resolved studies of dry etching processes, and (5) measurements of SiCl(x) product distributions as a function of substrate temperature. (jg)
Descriptors : *ATOMS, *SEMICONDUCTORS, *LASERS, *ETCHING, *DEPOSITION, *CHEMICAL RADICALS, *ATOMIC BEAMS, VELOCITY, ELECTRONICS, SCATTERING, PRODUCTION, INTERACTIONS, MOLECULES, MATERIALS, PROCESSING, HIGH TEMPERATURE, AUGMENTATION, FILMS, SUBSTRATES, PHYSICS, FLUORINE, SILICON, KINETIC ENERGY, DRY MATERIALS, CRYOGENICS, CHLORINE, VAPORIZATION.
Subject Categories : Atomic and Molecular Physics and Spectroscopy
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE