Accession Number : ADA291122

Title :   The Nucleation of Crystalline Films From Vapor Phase Reactants.

Descriptive Note : Final rept. 1 Sep 91-31 Oct 94,

Corporate Author : BROWN UNIV PROVIDENCE RI DIV OF ENGINEERING

Personal Author(s) : Sheldon, Brian W.

PDF Url : ADA291122

Report Date : 06 JAN 1995

Pagination or Media Count : 13

Abstract : Understanding and controlling the nucleation of diamond, silicon nitride, and silicon oxynitride was the primary objective of this research program, This work has made it possible to form the desired phase under more favorable processing conditions, and has also led to better control of the resultant film microstructures and properties. In this research we have focused on the use of thin interlayers to control and enhance nucleation. In the case of silicon oxynitride, we have also demonstrated the potential for using thin interlayers to enhance materials properties (i.e., oxidation resistance). (jg)

Descriptors :   *FILMS, *CHEMICAL VAPOR DEPOSITION, *CRYSTALS, *NUCLEATION, *REACTANTS(CHEMISTRY), CONTROL, LOW TEMPERATURE, MICROSTRUCTURE, LAYERS, PROCESSING, DIAMONDS, VAPOR PHASES, CERAMIC MATERIALS, COATINGS, CARBON CARBON COMPOSITES, MICROELECTRONICS, THINNESS, OXIDATION RESISTANCE, NITRIDES, SILICON NITRIDES, OXYNITRIDES.

Subject Categories : Physical Chemistry
      Inorganic Chemistry
      Ceramics, Refractories and Glass
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE