Accession Number : ADA291142

Title :   Vacuum Microelectronic Emitters and Their Applications Using Compound Semiconductor Technology

Descriptive Note : Final rept. 1 Aug 91-31 May 94,

Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Holcombe, David ; Jiang, Wei-Nan ; Mishra, Umesh K.

PDF Url : ADA291142

Report Date : 16 JUL 1994

Pagination or Media Count : 29

Abstract : Vacuum microelectronic devices (VMDs) are a class of devices in which electron transport occurs both in semiconductors and in vacuum. They have the potential of combining the advantages of vacuum tube based devices with those of modern semiconductor devices. The key to the success of VMDs is fabricating reliable solid state electron emitters with high emission efficiency and high emission current density. This report will present the design, growth, fabrication and characterization of Planar-Doped-Barrier Electron Emitters (PDBEEs) made of compound semiconductor AlGaAs/GaAs. In PDBEEs, electrons, as majority carriers, are injected over a triangular barrier into a high field region accelerated towards the surface. Injected Electrons gain kinetic energy from the field and lose kinetic energy through scattering processes. Those electrons with enough energy to overcome the surface barrier upon reaching the surface could be emitted into vacuum. The surface work function of semiconductors (GaAs in this work) is lowered by cesiation. An emission efficiency of 4.2 percent and an emission current density of 5.8 A/cm(2) have been obtained from Al(0.3)Ga(0.7)As/GaAs PDBEEs. (MM)

Descriptors :   *ELECTRON TRANSPORT, *VACUUM, *SEMICONDUCTOR DEVICES, *CATHODES, *MICROELECTRONICS, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, FABRICATION, CURRENT DENSITY, EPITAXIAL GROWTH, BARRIERS, KINETIC ENERGY, DOPING, EMITTERS, SOLID STATE ELECTRONICS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE